| PART |
Description |
Maker |
| APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| RURG30120CC FN3400 |
30A/ 1200V Ultrafast Dual Diode
30A, 1200V Ultrafast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRP30120 |
30A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| RURP30120 FN3397 |
From old datasheet system
30A, 1200V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| RJK60S7DPP-E0 RJK60S7DPP-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30N |
N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGW30NC120HD |
N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT
|
ST Microelectronics
|
| RJH1CV6DPQ-E013 |
1200V - 30A - IGBT Application: Inverter
Short circuit withstand time (5 us typ.)
|
Renesas Electronics Corporation
|
