| PART |
Description |
Maker |
| 2SK2200 |
NCHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
| C2M0080170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| C3M0065100J |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| VEC2814 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH281707 SCH2817 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2808 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2819 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2822 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5862 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
