| PART |
Description |
Maker |
| SQ3344D-70MHZ P1144-3SD-70MHZ P1145-3SD-70MHZ SQ33 |
20 Pin, 7.1 KB Std Flash, 256 RAM, 18 I/O Pb Free, -40C to 85C, 20-SOIC 300mil, T/R
14 pin PIC W/ECCP/PWM, 10 bit A2D, comparator, midrange core, 2K words flash and, -40C to 125C, 14-SOIC 150mil, TUBE
20 Pin, 3.5KB Flash, 128 RAM, 18 I/O, -40C to 125C, 20-QFN, T/R
20 Pin, 3.5 KB Std Flash, 128 RAM, 18 I/O Pb Free, -40C to 125C, 20-SSOP 208mil, T/R
FLASH-Based 8-Bit CMOS Microcontroller, -40C to 85C, 20-QFN, T/R
20 Pin, 7.1 KB Std Flash, 256 RAM, 18 I/O Pb Free, -40C to 125C, 20-SSOP 208mil, T/R
16 Pin, 7KB Std Flash, 256 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R
20 Pin, 7.1 KB Std Flash, 256 RAM, 18 I/O Pb Free, -40C to 125C, 20-PDIP, TUBE 晶体振荡
Crystal Oscillator 晶体振荡
14 pin PIC W/ECCP/PWM, 10 bit A2D, comparator, midrange core, 2K words flash and, -40C to 85C, 14-TSSOP, TUBE 晶体振荡
16 Pin, 7KB Std Flash, 256 RAM, 12 I/O, -40C to 125C, 16-QFN, TUBE 晶体振荡
20 Pin, 3.5 KB Std Flash, 128 RAM, 18 I/O Pb Free, -40C to 125C, 20-SOIC 300mil, T/R 晶体振荡
20 Pin, 3.5 KB Std Flash, 128 RAM, 18 I/O Pb Free, -40C to 85C, 20-SOIC 300mil, T/R 晶体振荡
20 Pin, 3.5 KB Std Flash, 128 RAM, 18 I/O Pb Free, -40C to 125C, 20-SOIC 300mil, TUBE 晶体振荡
14 Pin PIC w/USART, 10 Bit A2D, Flash EEPROM and Program Memory Read., -40C to 125C, 14-TSSOP, TUBE 晶体振荡
|
Pletronics
STMicroelectronics N.V.
Kingbright, Corp.
Electronic Theatre Controls, Inc.
Linear Technology, Corp.
ITT, Corp.
TE Connectivity, Ltd.
Avago Technologies, Ltd.
|
| P2353AB P2353AA P2300EC P0602AARP P1402AARP P1602A |
MCU CMOS 64 LD 33MHZ 8K EPRM, -40C to 85C, 64-TQFP, TRAY
MCU CMOS 68 LD 33MHZ 8K EPRM, 0C to 70C, 68-PLCC, TUBE
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-PLCC, TUBE
18LD 20MHZ .5K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|77V V(BO) MAX|800MA I(S)|TO-220VAR
MCU CMOS 18 LD 20MHZ 1K FLASH, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|160V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|220V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|300V V(BO) MAX|800MA I(S)|TO-220VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 4MHZ 1K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, TUBE
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SPDIP, TUBE
MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY
SIDAC|180V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 20LD 2K FLASH, 0C to 70C, 20-SSOP 208mil, T/R
SIDAC|220V V(BO) MAX|800MA I(S)|TO-92VAR
MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to 85C, 18-PDIP, TUBE
SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
18LD 20MHZ 2K EPRM/128 EEPROM, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|130V V(BO) MAX|800MA I(S)|DO-214AA
SIDAC|40V V(BO) MAX|800MA I(S)|TO-92VAR
SIDAC|210V V(BO) MAX|800MA I(S)|TO-220VAR
20LD 20MHZ 2K FLASH, -40C to 85C, 20-SSOP 208mil, T/R
20LD 4MHZ 2K EPRM/128 EEPROM, -40C to 85C, 20-SSOP 208mil, T/R
MCU CMOS 18 LD LOW PWR, -40C to 85C, 18-SOIC 300mil, T/R
SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC的| 77V V（下公报）最大| 800mA的我（县）|220VAR
SIDAC的| 40V的五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 130V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|220VAR
SIDAC的| 180V五（公报）最大| 800mA的我（县）|20VAR
SIDAC的| 220五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 40 LD 4MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 10MHZ 8K OTP, 0C to 70C, 44-PLCC, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|98V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 98V V（下公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|25V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 25V的五（公报）最大| 800mA的我（县）|DO - 214AA
SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA SIDAC的| 220五（公报）最大| 800mA的我（县）|DO - 214AA
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 10MHZ 8K OTP, -40C to 125C, 40-PDIP, TUBE SIDAC的| 40V的五（公报）最大| 800mA的我（县）|2VAR
14 PIN, 4KB FLASH, 128 RAM, 12 I/O, -40C to 85C, 16-QFN, T/R SIDAC的| 130V五（公报）最大| 800mA的我（县）|20VAR
14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to 85C, 14-SOIC 150mil, T/R SIDAC的| 98V V（下公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to 85C, 44-TQFP, TRAY SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 40 LD 40MHZ 8K OTP, -40C to 85C, 40-PDIP, TUBE SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
MCU CMOS 44 LD 20MHZ 4K EPRM, -40C to 125C, 44-MQFP, TRAY SIDAC的| 25V的五（公报）最大| 800mA的我（县）|2VAR
SIDAC|400V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 400V五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 68 LD 16MHZ 16K EPRM, 0C to 70C, 68-PLCC, TUBE SIDAC的| 260伏特五（公报）最大| 800mA的我（县）|20VAR
MCU CMOS 28 LD 40MHZ 16K OTP, -40C to 85C, 28-SOIC 300mil, T/R SIDAC的| 300V五（公报）最大| 800mA的我（县）|2VAR
SIDAC|250V V(BO) MAX|800MA I(S)|TO-220VAR SIDAC的| 250V五（公报）最大| 800mA的我（县）|20VAR
|
Littelfuse, Inc.
Ohmite Mfg. Co.
Analog Devices, Inc.
Vishay Intertechnology, Inc.
Molex, Inc.
Vicor, Corp.
TE Connectivity, Ltd.
Marktech Optoelectronics
Intel, Corp.
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| C8051F122 |
100 MIPS, 128 kB Flash, 10-Bit ADC, 100-Pin Mixed-Signal MCU
|
SILABS[Silicon Laboratories]
|
| AM29LV001BB-45RFI AM29LV001BB-45RFIB AM29LV001BB-4 |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位）的CMOS 3.0伏，只引导扇区闪
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32
64KX16,TSOP(II)44,IND,SRAM
|
http://
Advanced Micro Devices, Inc.
|
| S29WS256N0LBAI010 S29WS256N0PBFI013 S29WS064N0LBAW |
Replaced by PTB78520W : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
Replaced by PTB48510C : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
3.3Vout 30W 48V-Input Isolated DC-DC Converter 19-SIP MODULE -40 to 85 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
Replaced by PTB48560A : 25-WATT TRIPLE OUTPUT 48V-INPUT ISOLATED DC/DC CONVERTER FOR DSL 20-SIP MODULE 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA80
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪
Replaced by PTB48560C : 9V 30 Watt 48V-Input Isolated DC/DC Converter 19-SIP MODULE 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
LED SMT_ULED4 MICROLED RED/GREEN FOR USE WITH OPTOPIPE
|
Spansion, Inc.
Spansion Inc.
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
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International Rectifier, Corp.
IRF[International Rectifier]
|
| ATTINY2313 ATTINY2313-24SJ |
8-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PDSO20 0.300 INCH, LEAD FREE, PLASTIC, MS-013AC, SOIC-20
2K Bytes of In-System Self-Programmable Flash, 128 Bytes In-System Programmable EEPROM, 128 Bytes Internal SRAM. USI--Universal Serial Interface, Full Duplex UART. debugWIRE for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
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Atmel, Corp.
|
| S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29LV200T-100ECB AM29LV200T-100EE AM29LV200B-120E |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-33 RoHS Compliant: No
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 150 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO48
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
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ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
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