| PART |
Description |
Maker |
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT60M75PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 60.5A 0.075 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6017JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 31A 0.170 Ohm
|
Advanced Power Technology
|
| APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT6021BFLL APT6021SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
