| PART |
Description |
Maker |
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| MA4EXP190H1-1277T |
Silicon Double Balanced HMIC Mixer 1700 - 2200 MHz
|
M/A-COM Technology Solutions, Inc.
|
| B40C3700-2200 B125C3700-2200 B250C3700-2200 B380C3 |
MS27656T13B98A 硅桥式整流器
Replacement with:SKB B40C3200/2200
Silicon-Bridge Rectifiers
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| BY505 BY505_2 |
High-voltage soft-recovery rectifier(高压软恢复整流器) 0.05 A, 2200 V, SILICON, SIGNAL DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TC0201A |
SAW Resonator 433.920 MHz SMD 5X5 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| STEVAL-IKR001V6 |
Sub-GHz transceiver development kit based on the SPIRIT1 (920 MHz band)
|
STMicroelectronics
|
| IRKC61/20 IRKC61-20 IRKD270-22-NPBF IRKD270-24NPBF |
60 A, 2000 V, SILICON, RECTIFIER DIODE
270 A, 2200 V, SILICON, RECTIFIER DIODE
270 A, 2400 V, SILICON, RECTIFIER DIODE
DIODE 320 A, 600 V, SILICON, RECTIFIER DIODE, POWER, MAGN-A-PAK-3, Rectifier Diode
|
VISHAY SEMICONDUCTORS
|
| PTFA091201F PTFA091201E |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| PTFA092211EL PTFA092211FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ?960 MHz
|
Infineon Technologies AG
|
| PTFA091201HL PTFA091201GL PTFA091201GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
| ZN2PD-920 |
Power Splitter/Combiner 2 Way-0 50Ω 800 to 920 MHz
Power Splitter/Combiner 2 Way-0 50Ω 800 to 920 MHz
|
Mini-Circuits
|
| PE9601EK 9601-00 9601-01 9601-11 PE9601 |
2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOS?/a> Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOSInteger-N PLL for Rad Hard Applications
2200 MHz UltraCMOS⑩ Integer-N PLL for Rad Hard Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
