| PART |
Description |
Maker |
| GD511 |
SURFACE MOUNT,SWITCHING DIODE
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION
E-Tech Electronics LTD
|
| 2SC4942-15 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
|
Renesas Electronics Corporation
|
| 1SS389 E000306 |
DIODE (HIGH SEPPD SWITCHING APPLICATION)
From old datasheet system
HIGH SPEED SWITCHING APPLICATION
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| CPD83V-1N4148 |
High Speed Switching Diode Die 0.15 Amp, 100 Volt
|
Central Semiconductor C...
|
| H5N2001LD-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| FS50SM-5A FS50SM-5A-A8 |
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation.
|
