| PART |
Description |
Maker |
| TIM7785-12UL09 |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-6UL |
HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM4450-25UL |
HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM6472-16UL |
HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6106 AWT6106M5P8 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
From old datasheet system
Power Amplifiers
|
ANADIGICS, Inc
|
| AWT6235RM20P8 |
WiBro 3.4V/25.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6275RM20P8 AWT6275RM20P9 |
HELPTM IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6252M7P8 AWT6252 |
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
