| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SA1008 2SA1008-S 2SA1008-Z 2SA10081 2SA10082 2SA1 |
SILICON POWER TRANSISTOR 硅功率晶体管
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN
Silicon transistor
|
NEC, Corp.
NEC[NEC]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SD2164 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| 2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| 2SA1845 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
