| PART |
Description |
Maker |
| NP48N055KHE NP48N055KHE-E1-AY NP48N055KHE-E2-AY NP |
48 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
| APT30M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 300V 130A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT30M40LVFR APT10086BVFR_05 |
POWER MOS V 300V 76A 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT30M70BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 300V 48A 0.070 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| 2SK2689-01MR |
N-channel MOS-FET 50 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| 64P-501 64P-502 64P-504 64P-503 64W-501 64W-502 64 |
µP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay
TRIMMER 11MM CERMET MEHR 500R 300V 0.5W
TRIMMER 11MM CERMET MEHR 50K 300V 0.5W
TRIMMER 11MM CERMET MEHR 200K 300V 0.5W
TRIMMER 11MM CERMET MEHR 1K 300V 0.5W
TRIMMER 1K
TRIMMER 11MM CERMET MEHR 200R 300V 0.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V0.5W
TRIMMER 11MM CERMET MEHR 100K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100K00V.5W
TRIMMER 11MM CERMET MEHR 500K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 500K00V0.5W
TRIMMER 11MM CERMET MEHR 10K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10,000 300V0.5W
TRIMMER 11MM CERMET MEHR 2K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 2K 300V.5W
TRIMMER 11MM CERMET MEHR 20K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 20,000 300V.5W
TRIMMER 11MM CERMET MEHR 5K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 5K 300V.5W
TRIMMER 11MM CERMET MEHR 100R 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100R 300V.5W
|
Vishay Intertechnology, Inc.
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Amphenol, Corp.
|
| NTQS6466 ONSEMICONDUCTOR-NTQS6466R2 |
6.8 A, 20 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| HUFA76437S3S HUFA76437P3 HUFA76437S3ST |
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
