| PART |
Description |
Maker |
| K7B321825M K7B323625M K7B323625M-QC6575 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A321800M-QC25 K7A323600M-QC20 K7A321800M-QC20 K7 |
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P |
1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61QDPB21M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
