| PART |
Description |
Maker |
| A49LF040ATX-33F A49LF040A A49LF040ATL-33 A49LF040A |
4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory
|
AMICC[AMIC Technology]
|
| V58C365164S |
64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT
|
Mosel Vitelic Corp
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| TC58V64BDC |
64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia )
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| AT-255 AT-255TR |
3Volt Voltage Variable Attenuator 25 dB, DC - 2.5 GHz
|
MACOM[Tyco Electronics]
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
