| PART |
Description |
Maker |
| M37735EHBXXXFP M37735EHBFS |
PROM VERSION OF M37735MHBXXXFP
PROM VERSION OF M37735EHBXXXFP
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD703100AGJ-33-UEN UPD703100GJ-33-UEN UPD703101AG |
ROM-less version; Internal RAM: 4K bytes
Mask ROM version; Mask ROM: 96K bytes; Internal RAM: 4K bytes
Mask ROM version; Mask ROM: 128K bytes; Internal RAM: 4K bytes
Flash version; Internal flash: 128K bytes; Internal RAM: 4K bytes
32-bit RISC microcontroller (V850E/MS2:ROMless,Internal RAM: 4 KB)
|
NEC
|
| 74059-1014 0740591014 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Backplane Header, Vertical, 6-Row, Guide Pin Signal Module, Shield End Version, Pin End Version, 60 Circuits, Pin Leng
2.00mm (.079) Pitch VHDM? Board-to-Board Backplane Header, Vertical, 6-Row, Guide Pin Signal Module, Shield End Version, Pin End Version, 60 Circuits, Pin Length 5.15mm (.203)
|
Molex Electronics Ltd.
|
| 74059-2504 0740592504 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Backplane Header, Vertical, 6-Row, Guide Pin Signal Module, Shield End Version, Pin End Version, 150 Circuits, Pin Len
2.00mm (.079) Pitch VHDM? Board-to-Board Backplane Header, Vertical, 6-Row, Guide Pin Signal Module, Shield End Version, Pin End Version, 150 Circuits, Pin Length 5.15mm (.203)
|
Molex Electronics Ltd.
http://
|
| Q67100-H6423 Q-67106-H6514 Q67106-H6423 PMB2306 PM |
BiCMOS Low-Power Current Mode PWM Controller 8-SOIC -40 to 105
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 锁相环频率合成PMB2306R/PMB2306T版本2.2
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2
|
Infineon
SIEMENS AG
Siemens Semiconductor Group
|
| 74059-1003 0740591003 |
2.00mm (.079") Pitch VHDM庐 Board-to-Board Backplane Header, Vertical, 6-RowGuide Pin Signal Module, Shield End Version, Pin End Version, 60 Circuits, Pin Length
2.00mm (.079) Pitch VHDM? Board-to-Board Backplane Header, Vertical, 6-RowGuide Pin Signal Module, Shield End Version, Pin End Version, 60 Circuits, Pin Length
|
Molex Electronics Ltd.
|
| EETHC2A222CA EETHC2A222DA EETHC2A272CA EETHC2A332C |
Highly miniaturized version (30% smaller than HB series) Can vent construction
Aluminum Electrolytic Capacitors
Highly miniaturized version (30% smaller than HB series)
|
Panasonic Battery Group
Panasonic Semiconductor
|
| BUK473-100A BUK473-100B |
PowerMOS transistor Isolated version of BUK453-100A/B
PowerMOS transistor Isolated version of BUK453-100A/B 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| 150-01J08 146-06J08 150-03J08 150-01J08S 150-06J08 |
NOT RoHS. RF inductor, tunable, Carbonyl J core, shielded (add L" for compliant version)"
NOT RoHS. RF inductor, tunable, Carbonyl J core (add 'L for compliant version)" UNSHIELDED, 0.082 uH - 0.114 uH, VARIABLE INDUCTOR
NOT RoHS. RF inductor, tunable, Carbonyl J core (add 'L for compliant version)" UNSHIELDED, 0.188 uH - 0.292 uH, VARIABLE INDUCTOR
Inductor: RF: Unshielded: 0.049u: 50M: 88: Carbonyl Iron: Radial
|
COILCRAFT INC
Coilcraft, Inc.
|
| M50963E-XXXSP M50963E-XXXFP |
EPROM VERSION
|
Mitsubishi Electric Corporation
|
| O28.0-JAS32P4-12-30 O28.0-JAS32P4-12-50 JAS32P4 |
4 Pad Version
|
Jauch Quartz Gmbh
|
