| PART |
Description |
Maker |
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS210AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS302AP |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AJTLL |
SiC Schottky Barrier Diode
|
ROHM
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
