| PART |
Description |
Maker |
| MB3873 MB3873PF |
Multi-Resonance AC/DC Converter IC
|
Fujitsu Limited
|
| ATC700B331JW500XI |
High Self-Resonance
|
List of Unclassifed Manufacturers
|
| MR1722 MR1501 MR1511 MR1521 MR1531 |
(MR1xxx) Partial Resonance PS IC
|
Shindengen Electric
|
| SQ6601PT |
Off-Line Quasi-Resonance Flyback Switching Regulator 离线准谐振反激式开关稳压器
|
AUK, Corp.
AUK corp
|
| GT60M32306 GT60M323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT60J323 GT60J323H |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J327 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| IR21571 IR21571S IR21571STR IR2157S IR2157STR |
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime, Automatic Restart for Lamp Exchange in a 16-pin DIP package
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-pin DIP package
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime in a 16-lead SOIC Narrow package
Ballast Control, Below Resonance Protection, Thermal Overload Protection, Protection from Failure to Strike, Programmable Preheat Time and Run Frequency, Programmable Deadtime, Automatic Restart for Lamp Exchange in a 16-lead SOIC Narrow p
FULLY INTEGRATED BALLAST CONTROL IC
|
IRF[International Rectifier]
|
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
