| PART |
Description |
Maker |
| DF5A82FU EA08963 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF3A6.8FU DF3A68FU |
DIODE ZENER SINGLE 500mW 4.7Vz 5mA-Izt 0.05 3uA-Ir 2 PowerDI-323 3K/REEL
DIODES (DIODES FOR PROTECTING AGAINST ESD)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF3A8.2LFE |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| DF5A8.2F |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| 01ZA8.2 |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| DF5A68FU |
DIODES FOR PROTECTING AGAINST ESD
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF2S12FU07 DF2S12FU |
Diodes for Protecting Against ESD
|
Toshiba Semiconductor
|
| DF546 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
|
| DF3A6 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
TOSHIBA[Toshiba Semiconductor]
|
| BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54
|
Vishay
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MAZT062H MAZT082H MAZT120H MAZT068H MAZT100H |
Small-signal device - Diodes - Zener Diodes
ESD Diodes Silicon planar type
|
PANASONIC[Panasonic Semiconductor]
|
