| PART |
Description |
Maker |
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE3505M04-T2 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
California Eastern Labs
|
| NE3510M04-T2 NE3510M04-A NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Laboratories
|
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| NJ16 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| BF246A |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
Siemens Semiconductor G...
|
| NJ26A |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ01 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ903 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ1800D |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| SMPJ304 SMPJ305 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
