| PART |
Description |
Maker |
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
| KMM5324004CSWG KMM5324004CSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53616004BK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM53616004CK |
16MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| GMM7321010CNS-6 GMM7321010CNS-8 |
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1M X 32 EDO DRAM MODULE, 80 ns, SMA72 SIMM-72
|
Switchcraft, Inc.
|
| GMM7321000CNS-8 GMM7321000CNS-6 GMM7321000CNSG-7 |
1M X 32 FAST PAGE DRAM MODULE, 80 ns, SMA72 SIMM-72
1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
1M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72 SIMM-72
|
Switchcraft, Inc.
|
| KMM5322204C2WG KMM5322204C2W |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KMM5324100CK KMM5324000CK |
(KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4
|
Samsung Semiconductor
|
