| PART |
Description |
Maker |
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F032D70N6 M29F032D70N6T |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M28W640CB M28W640CT |
64 MBIT (4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
| M58CR064C M58CR064C10ZB6T M58CR064C12ZB6T M58CR064 |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W641DH |
64 MBIT (4MB X16, UNIFORM BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58WR064FB60ZB6F M58WR064FB70ZB6F M58WR064FB70ZB6T |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M58WR064FB60ZB6 M58WR064F-ZB M58WR064F-ZBE M58WR06 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M58LW064D |
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M58LW064D110N6P |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
