| PART |
Description |
Maker |
| BG3230 BG3230R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode 双N沟道MOSFET的四极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BF1009S07 BF1009SR |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
Infineon Technologies A...
|
| BF1009S |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q62702-F1771 BF2000 |
From old datasheet system
Silicon N Channel MOSFET Tetrode
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
New Jersey Semi-Conduct...
|
| BF996S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
TEMIC Semiconductors
|
| BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
| Q62702-F1587 BF1012W |
From old datasheet system
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
| BF2030 Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
