| PART |
Description |
Maker |
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| AT49F040NBSP AT49F040 |
4M bit, 5-Volt Read and 5-Volt Write Flash (Top or Bottom Boot)
From old datasheet system
|
Atmel Corp
|
| AT29C040A |
4M bit, 5-Volt Read and 5-Volt Write Flash
|
Atmel
|
| AT49LV1024A AT49LV1024A-45VC AT49LV1024A-45VL |
1M bit, 64K x 16, 3-Volt Read and 3-Volt Write Flash
1-megabit (64K x 16) 3-volt Only Flash Memory
|
ATMEL[ATMEL Corporation]
|
| AT49F008A AT49F008A-90TI AT49F8192AT-90TC AT49F819 |
x8/x16 Flash EEPROM
x8 Flash EEPROM
From old datasheet system
8M bit, 5-Volt Read and 5-Volt Byte-Write Flash
|
Atmel Corp
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| AM29PDL127H68VKI AM29PDL127H65VKIN AM29PDL127H68VK |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位）.0伏的CMOS只，页面模式同步写闪存与增强VersatileIO控制记忆
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 85 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA80
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位）.0伏的CMOS只，页面模式同步写闪存与增强VersatileIO控制记忆
|
Advanced Micro Devices
Spansion, Inc.
Spansion Inc.
|
