| PART |
Description |
Maker |
| BGD906MI BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier
|
Philips
|
| BGY883_4 BGY883-2015 BGY883 |
From old datasheet system
860 MHz, 15 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electronic ...
|
| BGE885 BGE885_4 BGE88501 BGE885-2015 |
From old datasheet system
860 MHz, 17 dB gain push-pull amplifier
|
Quanzhou Jinmei Electro...
Philips
NXP Semiconductors
|
| BGD885 BGD885_7 BGD88501 |
860 MHz, 17 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| MHW8222B |
MHW8222B 860 MHz, 22.7 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| MHW9182 MHW7182 MHW8182 |
18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| ANPC-171G ANPC-176G ANPC-174G ANPC-175G ANPC-172G |
Transformer, CCFL, SMT, RoHS
2400 MHz - 2500 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1710 MHz - 1880 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1850 MHz - 1990 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
Picocell Antennas 微微蜂窝天线
|
M/A-COM Technology Solutions, Inc.
Method Electronics, Inc.
3M Company
霍尼韦尔
FIBOX
Advanced Interconnections, Corp.
|
| MAFRIN0494 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
Tyco Electronics
|
