| PART |
Description |
Maker |
| MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| 8050AH P8749H P8748H 8039AHL 8035AHL 8049AH 8040AH |
HMOS single-component 8-bit microcontroller, programmable ROM = 1K x 8, 64 x 8 data memory
HMOS SINGLE-COMPONENT 8-BIT MICROCONTROLLER HMO的单分量8位微控制
IGBT Modules up to 1200V Chopper; Package: PG-TQFP-100; Max Clock Frequency: 20.0 MHz; SRAM (incl. Cache): 6.0 KByte; CAN Nodes: 0; A / D input lines
Hmos Single-Component 8 Bit Microcontroller
|
Intel, Corp.
Intel Corp.
INTEL[Intel Corporation]
http://
|
| IS49NLS96400 IS49NLS18320 |
576Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
| AM8158XC |
FPSLIC COMPANION MEM FOR 94K10 COM TEMP(FPGA) 非VGA视频控制
|
Vishay Intertechnology, Inc.
|
| MEM104J1J050B250S |
METALIZED POLYESTER FILM CAPACITORS MEM Series: Stacked Film, Minature
|
RFE international
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SE139N |
Electronic Component
|
Sanken Electric
|
| 6301 |
Component 1 6 X 1 PAIR
|
Alpha Wire
|
| MN152811 |
Electronic Component
|
Matsushita
|
