| PART |
Description |
Maker |
| STGB20NB37LZ |
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
|
ST Microelectronics
|
| STGB10NB37LZ |
N-Channel Clamped 10A-D2PAK Internally Clamped PowerMESHTM IGBT(N沟道绝缘栅双极晶体管) N通道钳位10A条，采用D2PAK内部钳位PowerMESHTM IGBT的（不适用沟道绝缘栅双极晶体管
|
STMicroelectronics N.V.
|
| STGB10NB37LZ_01 STGB10NB37LZ STGB10NB37LZ01 STGB10 |
N-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| IRFN350 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)
|
IRF[International Rectifier]
|
| JANTXV2N6768 JANTX2N6768 2472 |
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)
From old datasheet system
HEXFET? TRANSISTOR
|
IRF[International Rectifier]
|
| MGB15N35CLT4 MGP15N35CL MGC15N35CL |
Internally Clamped N-Channel IGBT
|
ONSEMI[ON Semiconductor]
|
| MGP15N38CL |
Internally Clamped N-Channel IGBT
|
ONSEMI[ON Semiconductor]
|
| STGD18N40LZ STGD18N40LZ-1 STGD18N40LZT4 STGP18N40L |
EAS 180 mJ - 390 V - internally clamped IGBT
|
ST Microelectronics
|
| STGD18N40LZ STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT |
EAS 180 mJ - 400 V - internally clamped IGBT
|
http://
STMicroelectronics
|
| MGP15N40CL_D ON1855 |
15 AMPERES N-CHANNEL IGBT V CE(on) = 1.8 V 380 VOLTS CLAMPED
From old datasheet system
|
ON Semi
|
