| PART |
Description |
Maker |
| IBM11S4320CP-60T |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
ITT, Corp.
|
| HYM32V8040GD-50 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Vishay Beyschlag
|
| HYM532210ATEG-70 HYM532210ASLTE-70 HYM532210ATE-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Atmel, Corp.
TE Connectivity, Ltd.
|
| GMM7328100BS-6 GMM7328100BS-8 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Broadcom, Corp.
|
| HYM53216000AM-60 HYM53216000AMG-60 HYM53216000ATM- |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| HB56T432D-5 HB56T432D-6 HB56T432D-7L HB56T432D-5L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
Lattice Semiconductor, Corp.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| IBM11D2325H-6RT IBM11D2325H-70 |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Data Delay Devices, Inc.
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HYM591000BM-70 HYM591000BM-60 HYM591000BLM-70 |
x(8 1) Fast Page Mode DRAM Module
|
|
