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2SD1776P - TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SOT-186 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186

2SD1776P_1922014.PDF Datasheet


Part No.	2SD1776P 2SD1776AP 2SD1776AO 2SD1776AQ 2SD1776O
Description	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| SOT-186 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 2A I(C) \| SOT-186 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一（c）\|的SOT - 186
File Size	162.19K / 2 Page
Maker	NEC, Corp.
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Full text search : TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SOT-186 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186

Product Description search : TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SOT-186 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186

Related Part Number

PART	Description	Maker
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 7.5A I(C) 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\| 7.5AI（丙	NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
2SD2027S 2SB507C 2SB1346S 2SD2027R	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| SOT-186 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 3A条一（c）\| TO - 220AB现有	Rohm Co., Ltd.
WT4321 WT4424 WT4415 WT4416 WT4425 WT4432 WT4433	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 325A I(C) \| FBASE-F TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 325A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 275A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 275A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 325A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 375A I(C) \| STR-3/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 375A I(C) \| STR-3/4
CDD2061D CDD2061	2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE. TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 3A条一（c）\| TO - 220AB现有	Continental Device India Limited
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 4A I(C) \| SIP TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 50MA I(C) \| TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 2A I(C) \| SIP 晶体管\|晶体管\|达林顿\|叩\| 100V的五（巴西）总裁\|甲一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 4A I(C) \| SIP 晶体管\|晶体管\|达林顿\|叩\| 80V的五（巴西）总裁\| 4A条一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SIP 晶体管\|晶体管\|达林顿\|进步党\| 100V的五（巴西）总裁\|甲一（c）\|园区 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-92	Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 40V V(BR)CEO \| 500MA I(C) \| SOT-23 晶体管\|晶体管\|达林顿\|叩\| 40V的五（巴西）总裁\| 500mA的一（c）\| SOT - 23封装 EZ-USB SX2™ High-Speed USB Interface Device KIT EZ-USB SX2 DEVELOPMENT IC, STATIC RAM, 512K X 8 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 30V V(BR)CEO \| 500MA I(C) \| SOT-23 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 200MA I(C) \| SOT-23 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SOT-23 Low-Cost 3.3V Zero Delay Buffer TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 50MA I(C) \| SOT-23VAR PCIX I/O System Clock Generator with EMI Control Features TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 200MA I(C) \| SOT-23 TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 600MA I(C) \| SOT-23 4-Mbit (128K x 36) Pipelined Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture KIT DEVELOPMENT EZ-USB FX2LP TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 200MA I(C) \| SOT-23VAR TRANSISTOR\|BJT\|NPN\|25VV(BR)CEO\|200MAI(C)\|SOT-23VAR TRANSISTOR\|BJT\|NPN\|30VV(BR)CEO\|200MAI(C)\|SOT-23VAR TRANSISTOR\|BJT\|PNP\|50VV(BR)CEO\|200MAI(C)\|SOT-23VAR
2SD1742A 2SD1742 0678 2SD1742/2SD1742A 2SD1742P	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-221VAR Power Transistors From old datasheet system 2SD1742. 2SD1742A - NPN Transistor	Matsshita / Panasonic
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101	Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 400MA I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 15A I(C) \| SIP 晶体管\|晶体管\| npn型\| 200伏五（巴西）总裁\| 15A条（c）的\|园区 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| TO-5 晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 300mA的一（c）\|	NXP Semiconductors N.V.
BDY23B	Bipolar NPN Device in a Hermetically sealed TO3 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-3	Seme LAB

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