| PART |
Description |
Maker |
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41ST87W M41ST87WMX6F M41ST87Y M41ST87YSS6F M41ST8 |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| UDS-3611H UDS-3612H UDS-3613H UDS-3614H UDN-3612M |
3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor
5.0 or 3.0V, 512 Bit (64 Bit x8) Serial RTC (SPI) SRAM and NVRAM Supervisor
Serial real-time clock
25 A standard and Snubberless" triacs
25 A standard and Snubberless" triacs 双外围驱动器
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 双外围驱动器
|
Motorola Mobility Holdings, Inc.
|
| FM1408S-150DSC FM1408-80DSC FM1608-80DSC FM1608-80 |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
STMicroelectronics N.V.
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
| M4Z32-BR00SH M40SZ100 M40SZ100W M40SZ100WMH M40SZ1 |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM 5VV的LPSRAM NVRAM中督导员
ZEROPOWER SNAPHAT Battery
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M40Z111 M40Z111MH M40Z111SH M40Z111W M40Z111WMH M4 |
NVRAM CONTROLLER for up to TWO LPSRAM
|
意法半导
STMicroelectronics
|
| M40Z11107 M40Z111WMH6E M40Z111WMH6F M4Z32-BR00SH1 |
5V or 3V NVRAM supervisor for up to two LPSRAMs
|
STMicroelectronics
|
| M41T56M6E M41T56M6F M41T56-07 |
Serial real-time clock with 56 bytes NVRAM
|
STMicroelectronics
|
| M41T11MH6E M41T11MH6F M41T11M6E M41T11M6F |
Serial real-time clock with 56 bytes of NVRAM
|
STMicroelectronics
|
