| PART |
Description |
Maker |
| C052H103K1G5GA |
Ceramic, 200C, MoldedHighTemp, 0.01 uF, 10%, 100 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| SUM110N10-09-E3 SUM110N10-09 |
TERMINAL
N-Channel 100-V (D-S) 200C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| C052H331J2G5GA |
Ceramic, 200C, MoldedHighTemp, 330 pF, 5%, 200 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| SUM110N08-05 |
N-Channel 75-V (D-S) 200C MOSFET
|
Vishay
|
| SUM110N04-02L |
N-Channel 40-V (D-S) 200C MOSFET
N-Channel 40-V (D-S) 200 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| APT5010JFLL |
POWER MOS 7 500V 44A 0.100 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| RJK0701DPP-E0 RJK0701DPP-E0-15 RJK0701DPP-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m
N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
