| PART |
Description |
Maker |
| FLM1415-3F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM1415-6F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| MGFC36V6472A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V5867 MGFC36V586711 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFK30V4045 MGFK30V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V647211 |
C band internally matched power GaAs FET
|
http://
|
| MGFC40V5964 MGFC40V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V3436 MGFC39V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
