| PART |
Description |
Maker |
| BFY280 BFY280H |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon
Siemens Semiconductor Group
|
| BFY182S BFY182 BFY182ES BFY182H BFY182P |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY181 BFY181ES BFY181H BFY181P BFY181S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
|
Siemens Semiconductor G...
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| BAS70 BAS70-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| BXY43 |
HiRel Silicon PIN Diode
|
Infineon Technologies A...
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
