| PART |
Description |
Maker |
| BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR12CM BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HBT138F-600 |
INSULATED TYPE TRIAC (TO-220F PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| HTN4A60 |
NON INSULATED TYPE TRIAC (TO-126 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| BCR20AM BCR20AM-8L |
400 V, 20 A, TRIAC, TO-220
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| HTN4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-126 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
