| PART |
Description |
Maker |
| IRLZ34NLPBF IRLZ34NSPBF |
Fast Switching
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035ヘ , ID = 30A )
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
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International Rectifier
|
| IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
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IRF[International Rectifier]
|
| IRFR4104PBF IRFU4104PBF IRFR4104TRL IRFR4104TRR |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mΩ , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A )
42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRFR5305PBF IRFU5305PBF IRFR5305TRPBF IRFR5305TR I |
Ultra Low On-Resistance
HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A )
HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065Ω , ID = -31A )
31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A)
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFU320 IRFR320 IRFR320PBF IRFR320TR IRFR320TRL IR |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Power MOSFET(Vdss=400V Rds(on)=1.8ohm Id=3.1A)
Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)
400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
IRF[International Rectifier]
|
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
| IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
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