| PART |
Description |
Maker |
| ST16CF54LEVELB |
4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低压单电源闪速存储器)
|
意法半导
|
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| FM22LD16-13 |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| AT25F409606 AT25F4096Y4-10YH-2.7 AT25F4096 AT25F40 |
4Mbit High Speed SPI Serial Flash Memory
|
ATMEL[ATMEL Corporation]
|
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| W28F641TT80L W28F641TB80L W28F641B W28F641BB80L W2 |
64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| ST230C16C0 |
IC: CONFIGURATION DEVICE 4MBIT, PACKAGE 8SOIC 1600V 410A型相位控制晶闸管采用TO - 200AA（甲，北辰）封装
|
International Rectifier, Corp.
|
| HYB39S256160AT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HMN5128D HMN5128D-85 HMN5128D-85I HMN5128D-70 HMN5 |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 5V
|
Hanbit Electronics Co.,Ltd
|
| ES29LV800DB-90RTG ES29DL400FB-12RTG ES29LV400DB-90 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| ES29DL160F-70RTG ES29DL320F-70RTG ES29DL640F-70RTG |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
