| PART |
Description |
Maker |
| UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors
Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| NSTB1002DXV5T1G |
(NSTB1002DXV5T1G / NSTB1002DXV5T5G) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 0912-7 0912-7-3 0912-7-2 |
From old datasheet system
Intemally Matched, Common Base Transistor
7 W, 50 V internally matched, common base transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Acrian
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| S8050 |
Collector-base breakdown voltage
|
TY Semiconductor Co., Ltd
|
| 2SA733 |
Collector-Base Voltage: VCBO=-60V
|
Guangdong Kexin Industr...
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
