| PART |
Description |
Maker |
| 2SD1755 |
Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SA719 2SA720 |
Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification) 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SC1384 2SC1383 |
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SD1272 |
Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| 2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| 13003BSL-T92-K 13003BSL-TM3-T 13003BSL-T60-K 13003 |
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
|
Unisonic Technologies
|
| XN1B301 XN0B301 |
For general amplification
|
PANASONIC[Panasonic Semiconductor]
|
| 2SB1169 2SB1169A |
For power amplification
|
Panasonic Semiconductor
|
| 2SD2395 |
For Power Amplification (50V, 3A)
|
ROHM[Rohm]
|
