| PART |
Description |
Maker |
| IBM11S4320CP-60T |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
ITT, Corp.
|
| HB56D51232SB-12A HB56D51232SB-6A |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
| IBM11E1320B-60 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Etron Technology, Inc
|
| HYM532256MG-70 HYM532256M-80 HYM532256M-60 HYM5322 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
HIROSE ELECTRIC Co., Ltd.
Central Semiconductor, Corp.
Shindengen Electric Manufacturing Co., Ltd.
|
| HB56TW432D-7L HB56TW433D-6 HB56TW433D-7 HB56TW433D |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
BRILLIANCE SEMICONDUCTOR, Inc.
TE Connectivity, Ltd.
|
| HB56G232B-6 HB56G132B-6 HB56G232B-6L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Bourns, Inc.
|
| IBM11S2320HLB-70 IBM11S2320HNA-60 IBM11S2320HLA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Hanbit Electronics Co., Ltd.
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| HYM59256AM-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
|
| HYM591600LM-60 HYM591600LM-70 HYM591600LM-80 HYM59 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
|
