| PART |
Description |
Maker |
| NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE851M33-T3-A NE851M33 NE851M33-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
| NE685M33-T3-A |
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories
|
| NE685M13 NE685M13-T3 |
NECs NPN SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NE68139-T1 NE68130-T1 NE68118-T1 NE68133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
|
| NE851M13 NE851M13-T3 |
From old datasheet system
NECs NPN SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NE68019-T1 NE68000 NE68030-T1 NE68035 NE68033-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍NPN硅高频晶体管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE681M03-T1-A |
BREADBOARD COPPER CLAD 11.5X17,1
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories
California Eastern Labs
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
