| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源
ASYNCHRONOUS STATIC RAM
|
ETC
ICSI[Integrated Circuit Solution Inc]
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
|
http://
SONY[Sony Corporation]
|
| IS61C512 IS61C512-15J IS61C512-15JI IS61C512-15NI |
ASYNCHRONOUS STATIC RAM
64K X 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61C64AH IS61C64AH-15J IS61C64AH-15U IS61C64AH-20 |
ASYNCHRONOUS STATIC RAM
8K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IS61LV5128 IS61LV5128-10T IS61LV5128-12TI IS61LV51 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61L |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM
(M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
RENESAS[Renesas Electronics Corporation]
|
