| PART |
Description |
Maker |
| WS512K32N-35H1CA WS512K32N-35H1MA WS512K32N-35H1IA |
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
|
Analog Devices, Inc.
|
| EDI8G32512V |
512Kx32 Static RAM CMOS, High Speed Module(512Kx32 高速CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
| WS512K32-85G2TI WS512K32-100G2TI WS512K32-85G2TC W |
512Kx32 SRAM MODULE, SMD 5962-94611
|
WEDC[White Electronic Designs Corporation]
|
| ACT-SF41632N-39P5Q ACT-SF41632N-39P5I ACT-SF41632N |
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module
|
Aeroflex Circuit Techno...
|
| ACT-SF512K32N-39F2C ACT-SF512K32N-37F2T ACT-SF512K |
ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
4-Bit D-type Registers with 3-State Outputs 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-PDIP 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-SO 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-PDIP 0 to 70
Quadruple D-Type Flip-Flops With Clear 16-SOIC 0 to 70
Hex D-Type Flip-Flops With Clear 16-SO 0 to 70
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
|
| EDI7F233512V100BNC |
512Kx32 FLASH
|
White Electronic Design...
|
| WF512K32N-90G2LM5A WF512K32N-90H1I5A |
512Kx32 5V FLASH MODULE, SMD 5962-94612
|
White Electronic Design...
White Electronic Designs Corporation
|
| ACT-SF41632N-39F2C ACT-SF41632N-37F2Q ACT-SF41632N |
Serial-out shift registers 16-SO 0 to 70 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
XTAL MTL SMT HC49/USM 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
Serial-out shift registers 16-SOIC 0 to 70 行为SF41632高28Kx32的SRAM / 512Kx32闪存多芯片模
RF CONNECTOR; 10-32 FEMALE, P.C. MOUNT
Serial-out shift registers 16-PDIP 0 to 70
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
