| PART |
Description |
Maker |
| IS42S32400B-6TL IS42S32400B-6B IS42S32400B-6BL IS4 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| HYB39L128160AC HYB39L128160AC-75 HYB39L128160AC-8 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
INFINEON[Infineon Technologies AG]
|
| IS42S81600B-7T IS42S81600B-7TI IS42S81600B-7TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IC42S16800D-7TL IS42S81600D-6T IS42S81600D-6TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| IS42S16800B-7TLI |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| MT24D836 MT24D836G-XX MT24D836M-XX MT12D436M-XX MT |
4Meg x 36 Parity DRAM SIMMs(4M x 36奇偶校验动态RAM（单列直插存储器模块 4Meg × 36平价的DRAM的SIMM米36奇偶校验动态随机存储器（单列直插存储器模块））
DRAM MODULE
|
Micron Technology, Inc.
|
