| PART |
Description |
Maker |
| LD27C513-200V10Q LD27C513-170V10L LD27C513-250V10L |
PAGE-ADDRESSED 512K (4 x 16K x 8) UV ERASABLE PROM 页寻址12k × 16K的8）紫外线可擦除可编程ROM
|
Intel Corp.
Intel, Corp.
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| TC514900AZL-70 TC514260BZLL-70 TC514800AZL-80 TC51 |
512K X 9 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
512K X 8 FAST PAGE DRAM, 80 ns, PZIP28 ZIP-28
512K X 8 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 18 FAST PAGE DRAM, 80 ns, PZIP40 ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
SIEMENS AG
|
| V53C816H V53C816H40 V53C816H45 V53C816H50 V53C816H |
512K X 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
| 93LC76 93LC76-IP 93LC76-ISN 93LC76-P 93LC76-SN 93L |
16-Bit Registered Transceivers With 3-State Outputs 56-TSSOP -40 to 85 8K/16K 2.5V的微型导线串行EEPROM
8K/16K 2.5V Microwire Serial EEPROM 8K/16K 2.5V的微型导线串行EEPROM
8K/16K 2.5V Microwire Serial EEPROM
|
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| HM1-65262/883 |
16K x 1 Asynchronous CMOS Static RAM 16K X 1 STANDARD SRAM, 85 ns, CDFP20
|
Intersil, Corp.
|
| CYDM064B16-55BVXC CYDM064B16-55BVXI CYDM256B16-55B |
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL㈢ Dual-Port Static RAM
|
Cypress Semiconductor
|
| CYDM256A16 CYDM256A16-35BVXC CYDM256A16-55BVXC CYD |
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL㈢ Dual-Port Static RAM
|
Cypress Semiconductor
|
