| PART |
Description |
Maker |
| K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG[Samsung semiconductor]
|
| K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY 连接器附
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| M36L0T7050 M36L0T7050B0 M36L0T7050T0 M36L0T7050T0Z |
128Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32Mbit (2M x16) PSRAM
From old datasheet system
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36L0T7050B0 M36L0T7050T0 |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM
|
STMicroelectronics
|
| V54C3128164VS V54C3128164VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic, Corp
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
