| PART |
Description |
Maker |
| 2SC5712 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC6033 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| TPCP8701 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5279 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2652 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| 2SC5748 |
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5859 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
|
TOSHIBA
|
| TPCP8901 |
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| MG30G6EL2 |
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE 东芝滋养模块硅npn型三重扩散型
|
Renesas Electronics, Corp.
ETC
Toshiba Semiconductor
|
| HN3B02FU |
TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
