| PART |
Description |
Maker |
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| M5M5408BFP M5M5408BKR M5M5408BKV M5M5408BRT M5M540 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5V5636GP-16 M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V408BTP-70HI M5M5V408BTP-85H M5M5V408BTP-85HI |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| MSM538002C |
524288 x 16-Bit or 1048576 x 8-Bit Mask ROM
|
OKI Semiconductor
|
