| PART |
Description |
Maker |
| AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| PE6820 |
50 Watts Medium Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| AA026P2-A4 |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:20; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 23.5-26.5 GHz的表面贴装中等功率放大器
23.5-26.5 GHz Surface Mount Medium Power Amplifier
23.526.5 GHz Surface Mount Medium Power Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AA022P2-00 |
213 GHz GaAs MMIC Medium Power Amplifier
21-23 GHz GaAs MMIC Medium Power Amplifier
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:26; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| EMA303D-2 |
19.5 - 24 GHz Medium Power MMIC
|
Excelics Semiconductor, Inc.
|
