| PART |
Description |
Maker |
| AD6458 AD6458ARS |
GSM 3 V Receiver IF Subsystem
|
AD[Analog Devices]
|
| MC13145FTA |
UHF Wideband Receiver Subsystem (LNA, Mixer, VCO, Prescaler, IF Subsystem, Coiless Detector)
|
LANSDALE Semiconductor Inc.
|
| PMB2407-F |
GSM Receiver PCN/PCS Receiver
|
SIEMENS AG
|
| HEDS5145A04 HEDS5145A02 HEDS5145A01 HEDS5145A06 HE |
LTM9001-AD - 16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: -400°C to 85°C
LTM9001-AD - 16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: 0°C to 70°C
LTC6412 - 800MHz, 31dB Range An alog-Controlled VGA; Package: 24-Lead (4mm × 4mm) Plastic QFN; Temperature Range: –40°C to 85°C
LTM9002-AA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: 0 to 70°C 光电
LTM9002-LA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: –40°C to 85°C 光电
|
Infineon Technologies AG
Electronic Theatre Controls, Inc.
|
| AD61009 |
Low Power Mixer 3V Receiver IF Subsystem
|
Analog Devices
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AD607 AD607ARS |
Low Power Mixer/AGC/RSSI 3 V Receiver IF Subsystem(低功耗混合器/AGC/RSSI 3V接收器IF子系
|
Analog Devices, Inc.
|
