| PART |
Description |
Maker |
| K3S7V2000M-TC15 K3S7V2000M-TC12 K3S7V2000M-TC10 K3 |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM 6400位（4Mx16 / 2Mx32）同步MASKROM
2M X 32 MASK PROM, 6 ns, PDSO86
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
| K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| SDC1767412 SDC1767411 RDC1767411 SDC1767 RDC1767 S |
14-Bit Synchro-to-Digital Converter
12- AND 14- BIT HYBRID SYNCHRO / RESOLVER TO DIGITAL CONVERTERS 12 -14 -位混合同分解数字转换
SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDMA32
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| EMC646SP16KS-45L EMC646SP16KS-45LF EMC646SP16KS-45 |
4Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
Samsung Electronic
|
| AD2S44 |
Low Cost, 14-Bit, Dual Channel Synchro/Resolver-to-Digital Converter
|
Analog Devices
|
| AD2S44SM12 AD2S44SM13B AD2S44SM14B AD2S44SM11 AD2S |
Low Cost, 14-Bit, Dual Channel Synchro/Resolver-to-Digital Converter
|
Analog Devices
|
