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2N6661 - N-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电0V,夹断电流0.9A的N沟道增强型MOSFET晶体

2N6661_1036481.PDF Datasheet

 
Part No. 2N6661
Description N-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电0V,夹断电流0.9A的N沟道增强型MOSFET晶体

File Size 72.46K  /  4 Page  

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Vishay Intertechnology,Inc.



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Part: 2N6661
Maker: MOT
Pack: CAN3
Stock: 1666
Unit price for :
    50: $7.38
  100: $7.02
1000: $6.65

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 Full text search : N-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电0V,夹断电流0.9A的N沟道增强型MOSFET晶体
 Product Description search : N-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电0V,夹断电流0.9A的N沟道增强型MOSFET晶体


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