| PART |
Description |
Maker |
| K7M161835B |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| IS61QDP2B451236A1 IS61QDP2B451236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| IS61QDPB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7R163684B06 K7R161884B |
512Kx36 & 1Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| K7P161866A K7P163866A |
(K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| IS61DDB41M18A |
1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
