| PART |
Description |
Maker |
| CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五（巴西）总裁| 300我（丙）
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 150A一（c
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 50A条一（c
|
ON Semiconductor
RECOM Electronic GmbH
|
| AP1043 AP1044 AP1141 AP1057 AP1103 AP1137 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-111
Power inductor, 10/20% tol, SMT, RoHS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-5
|
Electronic Theatre Controls, Inc.
|
| D67DE7 D67DE5 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 500V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 500V五（巴西）总裁| 100号A一（c
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 100号A一（c
|
Powerex, Inc.
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| MG75H2CL1 |
TRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,500V V(BR)CEO,75A I(C)
From old datasheet system
|
Toshiba.
|
| BUF460F |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 450V V(BR)CEO | 80A I(C) 晶体管|晶体管电源模块|独立| 450V五（巴西）总裁|0A条（丙）
|
STMicroelectronics N.V.
|
| D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D |
Refresh Counter
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 4A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
Non-Muxed Address DRAM Muxed地址内存
Analog Switch 模拟开
Peripheral Miscellaneous 周边杂项
|
Intersil, Corp.
Rochester Electronics, LLC
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| ESM3045AV |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 24A I(C) 晶体管|晶体管电源模块|达林顿| 450V五（巴西）总裁| 24A条一（c
|
Rectron Semiconductor
|
| ETM36-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 200安培我（丙）
|
Bourns, Inc.
|
| QM15TB2HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁|5A一（c
|
NXP Semiconductors N.V.
|
| QM30E3Y-H |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块|达林顿| 600V的五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
