| PART |
Description |
Maker |
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| MC-242443F9-B10-BT3 MC-242443F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
| MB82DBS02163C MB82DBS02163C-70L MB82DBS02163C-70LP |
32 M Bit (2 M word】16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
| UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
| UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| MC-2311100F9-B90-BQ1 MC-2311100F9-B10-BQ1 MC-23111 |
MCP(16M-bit Mobile Specified RAM 4M-bit SRAM)
|
NEC
|
| UPD4616112F9-B95LX-BC2 UPD4616112F9-B85LX-BC2 UPD4 |
16M-bit(1M-word x 16-bit) MOBILE SPECIFIED RAM
|
NEC
|
| HYE18L128160BF-7.5 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
http://
|
| HYB18L128160BC-7.5 HYE18L128160BC-7.5 HYB18L128160 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
Qimonda AG
|
